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Chin. Opt. Lett.
 Home  List of Issues    Issue 09 , Vol. 16 , 2018    10.3788/COL201816.091402

Ablation effects and mechanism of sintered silicon carbide ceramics by an ArF excimer laser
Xin Guo, Jinbin Ding, Yi Zhou, and Yu Wang
[Academy of Opto-Electronics, Chinese Academy of Sciences], Beijing 100094, China

Chin. Opt. Lett., 2018, 16(09): pp.091402

Topic:Lasers and laser optics
Keywords(OCIS Code): 140.3390  140.2180  160.6000  

The ablation of sintered silicon carbide ceramics by an ArF excimer laser was studied. Three zones are generated: the ablation zone that presented molten morphology and was composed by the Si and C phase; the condensation zone formed by vaporized SiC; and the oxidation zone that showed the characteristics of thermal oxidation. The ablation depth and oxidation range increase linearly with fluence and pulses within 0.5–4 J/cm2, but the normalized ablation efficiency is constant (3.60 ± 0.60 μm·mm2/J). The theoretical photochemical ablation depth supplies 25% of the total depth at 1 J/cm2 but decreases to 16% at 4 J/cm2. The ablation is dominated by the photothermal effect and conforms to the thermal evaporation mechanism.

Copyright: © 2003-2012 . This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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Posted online:2018/8/31

Get Citation: Xin Guo, Jinbin Ding, Yi Zhou, and Yu Wang, "Ablation effects and mechanism of sintered silicon carbide ceramics by an ArF excimer laser," Chin. Opt. Lett. 16(09), 091402(2018)

Note: This work was supported by the National Natural Science Foundation of China (No. 61705235) and the Innovation Project of the Academy of Opto-Electronics, Chinese Academy of Sciences (No. Y70B03A12Y).


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