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Chin. Opt. Lett.
 Home  List of Issues    Issue 07 , Vol. 16 , 2018    10.3788/COL201816.072502


Optical saturation characteristics of dual- and single-injection Ge-on-Si photodetectors
Jishi Cui, Bowen Bai, Fenghe Yang, and Zhiping Zhou
State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, [Peking University], Beijing 100871, China

Chin. Opt. Lett., 2018, 16(07): pp.072502

DOI:10.3788/COL201816.072502
Topic:Optoelectronics
Keywords(OCIS Code): 250.0040  040.5160  250.3140  

Abstract
The optical saturation characteristics in the germanium-on-silicon (Ge-on-Si) photodetector are studied for the first time, to the best of our knowledge. The relationship between the optical saturation characteristics and the optical field distribution in the Ge layer is illustrated by the simulation. This theory is verified by comparative experiments with single-injection and dual-injection structures. The dual-injection photodetector with a more balanced and uniform optical field distribution has a 13% higher responsivity at low optical power and 74.4% higher saturation current at 1550 nm. At higher optical power, the bandwidth of the dual-injection photodetector is five times larger than that of the single-injection photodetector.

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Received:2018/3/8
Accepted:2018/5/21
Posted online:2018/6/29

Get Citation: Jishi Cui, Bowen Bai, Fenghe Yang, and Zhiping Zhou, "Optical saturation characteristics of dual- and single-injection Ge-on-Si photodetectors," Chin. Opt. Lett. 16(07), 072502(2018)

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