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Chin. Opt. Lett.
 Home  List of Issues    Issue 01 , Vol. 16 , 2018    10.3788/COL201816.011402


Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs/GaAs quantum well structure
Yan Jia1, Qingnan Yu1, Fang Li1, Mingqing Wang1, Wei Lu1, Jian Zhang2, Xing Zhang2, Yongqiang Ning2, and Jian Wu1
1 Department of Applied Physics, Beihang University, Beijing 1 001 91 , China
2 State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130000, China

Chin. Opt. Lett., 2018, 16(01): pp.011402

DOI:10.3788/COL201816.011402
Topic:Lasers and laser optics
Keywords(OCIS Code): 140.3380  140.3480  140.5960  230.5590  

Abstract
In this Letter, the loss and gain characteristics of an unconventional InxGa1?xAs/GaAs asymmetrical step well structure consisting of variable indium contents of InxGa1?xAs materials are measured and analyzed for the first time, to the best of our knowledge. This special well structure is formed based on the indium-rich effect from the material growth process. The loss and gain are obtained by optical pumping and photoluminescence (PL) spectrum measurement at dual facets of an edge-emitting device. Unlike conventional quasi-rectangle wells, the asymmetrical step well may lead to a hybrid strain configuration containing both compressive and tensile strains and, thus, special loss and gain characteristics. The results will be very helpful in the development of multiple wavelength InGaAs-based semiconductor lasers.

Copyright: © 2003-2012 . This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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Received:2017/9/12
Accepted:2017/11/10
Posted online:2017/12/2

Get Citation: Yan Jia, Qingnan Yu, Fang Li, Mingqing Wang, Wei Lu, Jian Zhang, Xing Zhang, Yongqiang Ning, and Jian Wu, "Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs/GaAs quantum well structure," Chin. Opt. Lett. 16(01), 011402(2018)

Note: This work was supported by the National Natural Science Foundation of China under Grant Nos. 61376067 and 61474118.



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