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Chin. Opt. Lett.
 Home  List of Issues    Issue 01 , Vol. 16 , 2018    10.3788/COL201816.010603


Effect of power scale of 974 and 633 nm lasers on the induced loss at 633 nm of Yb3+/Al3+ co-doped silica fiber
Fenghou Xie1;2, Chongyun Shao1;2, Fengguang Lou1, Meng Wang1, Chunlei Yu1, Suya Feng1;3, and Lili Hu1
1 Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201 800, China
2 University of Chinese Academy of Sciences, Beijing 100049, China
3 e-mail: fsy@siom.ac.cn

Chin. Opt. Lett., 2018, 16(01): pp.010603

DOI:10.3788/COL201816.010603
Topic:Fiber optics and optical communication
Keywords(OCIS Code): 060.2270  060.2290  060.2300  060.2400  

Abstract
Induced loss at 633 nm is tested in Yb3+/Al3+ co-doped silica fiber by a core pumped with a 974 nm laser and probed with a 633 nm laser. The fiber is prepared by the modified chemical vapor deposition method combined with solution doping. Different power scales of pump light and probe light are used in the tests. It is found that there is a dynamic equilibrium between photobleaching induced by 633 nm probe light and photodarkening (PD) induced by 974 nm pump light. For the first time to our knowledge, the effect of 633 nm probe laser power on an induced loss test of Yb3+/Al3+ co-doped silica fiber is studied quantitatively. It suggests that as long as the 633 nm probe light power is less than 0.2 mW, the induced loss is mainly contributed by the PD effect of pumping light, and the deviation of induced loss is less than 5%.

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Received:2017/8/14
Accepted:2017/10/20
Posted online:2017/12/2

Get Citation: Fenghou Xie, Chongyun Shao, Fengguang Lou, Meng Wang, Chunlei Yu, Suya Feng, and Lili Hu, "Effect of power scale of 974 and 633 nm lasers on the induced loss at 633 nm of Yb3+/Al3+ co-doped silica fiber," Chin. Opt. Lett. 16(01), 010603(2018)

Note: This work was supported by the Young Scientists Fund of the National Natural Science Foundation of China (No. 61405215), the Youth Innovation Promotion Association, and the Special Program for Advanced Electronic Materials of the Ministry of Science and Technology, China (No. 2016YFB0402201).



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