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Chin. Opt. Lett.
 Home  List of Issues    Issue 10 , Vol. 15 , 2017    10.3788/COL201715.102301


Quantum dot quantum cascade photodetector using a laser structure
Fengjiao Wang1, Ning Zhuo1, Shuman Liu1;2, Fei Ren1, Shenqiang Zhai1, Junqi Liu1;2, Jinchuan Zhang1, Fengqi Liu1;2, and Zhanguo Wang1
1 Key Laboratory of Semiconductor Materials Science, [Institute of Semiconductors], Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 1 00083, China
2 College of Materials Science and Opto-Electronic Technology,[ University of Chinese Academy of Sciences], Beijing 100049, China

Chin. Opt. Lett., 2017, 15(10): pp.102301

DOI:10.3788/COL201715.102301
Topic:Optical devices
Keywords(OCIS Code): 230.5590  040.3060  040.5570  230.5160  

Abstract
We report on a quantum dot quantum cascade detector (QD-QCD), whose structure is derived from a QD cascade laser. In this structure, more ordered InAs QD layers formed in the Stranski–Krastanow growth mode on a thin GaAs buffer layer are incorporated into the active region. This QD-QCD can operate up to room temperature with a peak detection wavelength of 5.8 μm. A responsivity of 3.1 mA/W at 160 K and a detectivity of 3.6?×?108 Jones at 77 K are obtained. The initial performance of the detector is promising, and, by further optimizing the growth of InAs QDs, integrated QD-quantum cascade laser/QCD applications are expected.

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Received:2017/4/18
Accepted:2017/7/14
Posted online:2017/8/9

Get Citation: Fengjiao Wang, Ning Zhuo, Shuman Liu, Fei Ren, Shenqiang Zhai, Junqi Liu, Jinchuan Zhang, Fengqi Liu, and Zhanguo Wang, "Quantum dot quantum cascade photodetector using a laser structure," Chin. Opt. Lett. 15(10), 102301(2017)

Note: This work was supported by the National Basic Research Program of China (No. 2013CB632804/02) and the National Natural Science Foundation of China (Nos. 61376501, 61404131, and 11274301). The authors would like to thank Ping Liang and Ying Hu for their help in device processing.



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