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Chin. Opt. Lett.
 Home  List of Issues    Issue 06 , Vol. 15 , 2017    10.3788/COL201715.062401

Optical rectification and Pockels effect as a method to detect the properties of Si surfaces
Qi Wang1, Li Zhang1, Xin Wang1, Haiyan Quan1, Zhanguo Chen1, Jihong Zhao1, Xiuhuan Liu2, Lixin Hou3, Yanjun Gao1, Gang Jia1, and Shaowu Chen4
1 State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, [Jilin University], Changchun 1 3001 2, China
2 College of Communication Engineering, [Jilin University], Changchun 130012 , China
3 College of Information Technology, [Jilin Agricultural University], Changchun 13 0118, China
4 State Key Laboratory on Integrated Optoelectronics, [Institute of Semiconductors], Chinese Academy of Sciences, Beijing 100083, China

Chin. Opt. Lett., 2017, 15(06): pp.062401

Topic:Optics at surfaces
Keywords(OCIS Code): 240.4350  190.4350  190.4720  

The depth profile of electric-field-induced (EFI) optical rectification (OR) and EFI Pockels effect (PE) in a Si(110) crystal are investigated. The results show that EFI OR and PE signals are very sensitive to the electric field strength in the surface layers of the Si crystal. Theoretical formulas that include the electric field parameters and the widths of the space-charge region are presented and agreed very well with the experimental results. The experiments and simulations indicate that EFI OR and PE are potential methods for researching the surface/interface properties along the depth direction in centrosymmetric crystals such as Si.

Copyright: © 2003-2012 . This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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Posted online:2017/3/20

Get Citation: Qi Wang, Li Zhang, Xin Wang, Haiyan Quan, Zhanguo Chen, Jihong Zhao, Xiuhuan Liu, Lixin Hou, Yanjun Gao, Gang Jia, and Shaowu Chen, "Optical rectification and Pockels effect as a method to detect the properties of Si surfaces," Chin. Opt. Lett. 15(06), 062401(2017)

Note: This work was partially supported by the National Natural Science Foundation of China (Nos. 61474055 and 60976043) and the National 863 Program of China (No. 2009AA03Z419).


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