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Chin. Opt. Lett.
 Home  List of Issues    Issue 06 , Vol. 15 , 2017    10.3788/COL201715.061401

Parasitic lasing in large aperture Ti:sapphire chirped pulse amplifier
Zutao Fan1;2, Zebiao Gan1;3, Xiaoyan Liang1;2, Lianghong Yu1, Wenqi Li1;2, Zhen Guo1, Xiaolong Yuan1;3, He Cao1, Pei Huang1, Ruxin Li1;2, and Zhizhan Xu1;2
1 [Shanghai Institute of Optics and Fine Mechanics], Chinese Academy of Sciences, Shanghai 201 800, China
2 [ShanghaiTech University], Shanghai 2 0012 0, China
3 [University of Chinese Academy of Sciences], Beijing 10003 9, China

Chin. Opt. Lett., 2017, 15(06): pp.061401

Topic:Lasers and laser optics
Keywords(OCIS Code): 140.3280  140.3590  140.5560  

We research some properties of parasitic lasing (PL) in the Ti:sapphire chirped pulse amplifier with the crystal diameter of 100 mm. The evolutionary process from the spontaneous emission to the PL and its influence on amplified output energy, spectrum, and beam profile are experimentally measured. The threshold of PL in the crystal is 22 J, and the output signal can still keep rising with the pump when the pump energy is below 38 J. The PL has no obvious impact on the output spectrum and beam profile besides the energy.

Copyright: © 2003-2012 . This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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Posted online:2017/3/17

Get Citation: Zutao Fan, Zebiao Gan, Xiaoyan Liang, Lianghong Yu, Wenqi Li, Zhen Guo, Xiaolong Yuan, He Cao, Pei Huang, Ruxin Li, and Zhizhan Xu, "Parasitic lasing in large aperture Ti:sapphire chirped pulse amplifier," Chin. Opt. Lett. 15(06), 061401(2017)

Note: This work was supported by the National Natural Science Foundation of China (NSFC) under Grant Nos. 61378030 and 61521093.


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