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Chin. Opt. Lett.
 Home  List of Issues    Issue s1 , Vol. 11 , 2013    10.3788/COL201311.S10307


Microstructure and optical properties of Ge films prepared by ion beam assisted deposition
Jian Leng1;2, Yiqin Ji2, Li Zhao1, Huasong Liu2, Dandan Liu2, Chenghui Jiang2
1 Department of Physics and Surface Physics National Key Laboratory, [Fudan University], Shanghai 200433, China
2 Tianjin Key Laboratory of Optical Thin Films, [Tianjin Jinhang Institute of Technical Physics], Tianjin 300192, China

Chin. Opt. Lett., 2013, 11(s1): pp.S10307

DOI:10.3788/COL201311.S10307
Topic:Measurement and characterization
Keywords(OCIS Code): 310.1860  310.6860  

Abstract
Germanium (Ge) films are prepared on BK7 glass and multispectral zinc sulfide (m-ZnS) substrates by ion beam assisted deposition (IBAD). The effects of substrate temperature, deposition rate, and ion energy on the microstructure and optical properties of the films are investigated. It can be concluded that Ge film deposited with higher rate or ion energy has more optical absorption, while ion energy below 150 eV helps to reduce film absorption. Film refractive index increases with film deposition rate and bombardment ion energy while it is below 300 eV. And higher growth rate or bombardment ion energy can weaken film diffraction intensity.

Copyright: © 2003-2012 . This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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Received:2012/11/30
Accepted:2013/1/8
Posted online:2013/6/7

Get Citation: Jian Leng, Yiqin Ji, Li Zhao, Huasong Liu, Dandan Liu, Chenghui Jiang, "Microstructure and optical properties of Ge films prepared by ion beam assisted deposition," Chin. Opt. Lett. 11(s1), S10307(2013)

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