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Chin. Opt. Lett.
 Home  List of Issues    Issue s1 , Vol. 08 , 2010    10.3788/COL201008s1.0201


Antistatic and antireflection coating using indium tin oxide prepared by magnetron reactive sputtering
Haixing Chen, Yuyong Huang, Xuanqian Xu, Shengyuan Bai
Optics Division, [Oerlikon (Shanghai) Co.], Ltd., Shanghai 200131, China

Chin. Opt. Lett., 2010, 08(s1): pp.201-203-3

DOI:10.3788/COL201008s1.0201
Topic:Thin films
Keywords(OCIS Code): 310.0310  160.0160  220.0220  

Abstract
Antistatic and antireflection (ASAR) coating using indium tin oxide (ITO) by magnetron reactive sputtering (MRS) technique is presented. The relationship between sheet resistance and optical transmittance of ITO prepared by MRS is investigated, and the optimum ITO parameters by MRS are studied through the variation of oxygen flow, temperature, argon flow, and sputtering power. The optical constant of ITO is modeled by combining a single Lorentz oscillator and a Drude free-electron component in the range of 300-1500 nm, which fits well with the experimental data. ASAR coating is designed using ITO based on the optimized parameters, and is implemented by MRS. Experimental results show that ASAR coating by MRS displays high transmittance of up to 99.2%, and low sheet resistance of less than 1.1 k-.

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Received:2009/12/3
Accepted:
Posted online:

Get Citation: Haixing Chen, Yuyong Huang, Xuanqian Xu, Shengyuan Bai, "Antistatic and antireflection coating using indium tin oxide prepared by magnetron reactive sputtering," Chin. Opt. Lett. 08(s1), 201-203-3(2010)

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