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Chin. Opt. Lett.
 Home  List of Issues    Issue 10 , Vol. 05 , 2007    Optimization of gallium nitride-based laser diode through transverse modes analysis

Optimization of gallium nitride-based laser diode through transverse modes analysis
Xiaomin Jin1, Bei Zhang2, Liang Chen3, Tao Dai2, Guoyi Zhang2
1Electrical Engineering Department, [California Polytechnic State University], San Luis Obispo, CA 93407, USA

2School of Physics and State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, [Peking University], Beijing 100871

3[RSoft Design Group, Inc.], 400 Executive Boulevard, Suite 100, Ossining, NY 10562, USA

Chin. Opt. Lett., 2007, 05(10): pp.588-590-3

Topic:Lasers and laser optics
Keywords(OCIS Code): 140.0140  140.5960  220.0220  

We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is an important factor to determine the optical mode. Finally, we discuss the lasing performance of the GaN LD based on the transverse optical modes.

Copyright: © 2003-2012 . This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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Get Citation: Xiaomin Jin, Bei Zhang, Liang Chen, Tao Dai, Guoyi Zhang, "Optimization of gallium nitride-based laser diode through transverse modes analysis," Chin. Opt. Lett. 05(10), 588-590-3(2007)

Note: We thank Wang Faculty Fellowship at Peking University, China, 2006-2007 through California State University (CSU) International Programs USA. This work was supported by the "973" Program of China (No. TG2007CB307004), the "863" Program of China (No. 863-2006AA03A113), and the National Natural Science Foundation of China (No. 60276034, 60577030, and 60607003). X. Jin's e-mail address is xjin@calpoly.edu.


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