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Chin. Opt. Lett.
 Home  List of Issues    Issue 10 , Vol. 05 , 2007    High performance 1689-nm quantum well diode lasers


High performance 1689-nm quantum well diode lasers
Yupeng Duan1, Tao Lin2, Cuiluan Wang3, Feng Chong3, Xiaoyu Ma3
1Department of Physics, [Northwest University], Xi'an 710069

2Department of Electronic Engineering, [Xi'an University of Technology], Xi'an 710048

3[Institute of Semiconductors, Chinese Academy of Sciences], Beijing 100083

Chin. Opt. Lett., 2007, 05(10): pp.585-587-3

DOI:
Topic:Lasers and laser optics
Keywords(OCIS Code): 140.2020  140.5960  160.6000  260.3060  

Abstract
1689-nm diode lasers used in medical apparatus have been fabricated and characterized. The lasers had pnpn InP current confinement structure, and the active region consisted of 5 pairs of InGaAs quantum wells and InGaAsP barriers. Stripe width and cavity length of the laser were 1.8 and 300 microns, respectively. After being cavity coated and transistor outline (TO) packaged, the lasers showed high performance in practice. The threshold current was about 13+-4 mA, the operation current and the lasing spectrum were about 58+-6 mA and 1689+-6 nm at 6-mW output power, respectively. Moreover, the maximum output power of the lasers was above 20 mW.

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Received:2007/3/19
Accepted:
Posted online:

Get Citation: Yupeng Duan, Tao Lin, Cuiluan Wang, Feng Chong, Xiaoyu Ma, "High performance 1689-nm quantum well diode lasers," Chin. Opt. Lett. 05(10), 585-587-3(2007)

Note: The authors gratefully acknowledge Guangze Zhang, Kai Zheng, Suping Liu for their supports in the material growth and devices testing. Y. Duan's e-mail address is yupengduan@sina.com.



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