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Chin. Opt. Lett.
 Home  List of Issues    Issue 09 , Vol. 05 , 2007    Study of white light emission from ZnS/PS composite system

Study of white light emission from ZnS/PS composite system
Caifeng Wang1;2, Qingshan Li1;3, Lei Lu1, Lichun Zhang1, Hongxia Qi1
1College of Physics and Engineering, [Qufu Normal University], Qufu 273165

2Department of Physics and Electronics Science, [Binzhou University], Binzhou 256600

3[Ludong University], Yantai 264025

Chin. Opt. Lett., 2007, 05(09): pp.546-548-3

Keywords(OCIS Code): 250.5230  310.6860  230.4170  

ZnS films were deposited by pulsed laser deposition (PLD) on porous silicon (PS) substrates formed by electrochemical anodization of p-type (100) silicon wafer. The photoluminescence (PL) spectra of ZnS/PS composites were measured at room temperature. Under different excitation wavelengths, the relative integrated intensities of the red light emission from PS layers and the blue-green emission from ZnS films had different values. After samples were annealed in vacuum at different temperatures (200, 300, and 400 Celsius degree) for 30 min respectively, a new green emission located at around 550 nm appeared in the PL spectra of all ZnS/PS samples, and all of the ZnS/PS composites had a broad PL band (450-700 nm) in the visible region, exhibiting intensively white light emission.

Copyright: © 2003-2012 . This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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Get Citation: Caifeng Wang, Qingshan Li, Lei Lu, Lichun Zhang, Hongxia Qi, "Study of white light emission from ZnS/PS composite system," Chin. Opt. Lett. 05(09), 546-548-3(2007)

Note: This work was supported by the Natural Science Foundation of Shandong Province under Grant No. Y2002A09. C. Wang's e-mail address is cfwang_2004@163.com.


1. J. Kido, M. Kimura, and K. Nagai, Science 267, 1332 (1995).

2. C. W. Ko and Y. T. Tao, Appl. Phys. Lett. 79, 4234 (2001).

3. S. Tokito, T. Lijima, T. Tsuzuki, and F. Sato, Appl. Phys. Lett. 83, 2459 (2003).

4. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).

5. Y. Yang, Q. Li, and X. Liu, Chin. Opt. Lett. 4, 297 (2006).

6. A. Gokarna, S. V. Bhoraskar, N. R. Pavaskar, and S. D. Sathaye, Phys. Stat. Sol. (a) 182, 175 (2000).

7. A. Gokarna, N. R. Pavaskar, S. D. Sathaye, V. Ganesan, and S. V. Bhoraskar, J. Appl. Phys. 92, 2118 (2002).

8. L. Wang, Y. Xia, J. Ju, Y. Fan, W. Zhang, Y. Mo, W. Shi, and W. Sang, Acta Opt. Sin. (in Chinese) 21, 753 (2001).

9. Y. Bai, Y. Lan, H. Zhu, and Y. Mo, Acta Opt. Sin. (in Chinese) 25, 1712 (2005).

10. Q. Chen, D. Zhu, C. Zhu, J. Wang, and Y. Zhang, Appl. Phys. Lett. 82, 1018 (2003).

11. Y. Liu, Y. Liu, H. Yang, W. Wang, J. Ma, J. Zhang, Y. Lu, D. Shen, and X. Fan, J. Phys. D 36, 2705 (2003).

12. S. Yano, R. Schroeder, H. Sakai, and B. Ullrich, Appl. Phys. Lett. 82, 2026 (2003).

13. S. Velumani and J. A. Ascencio, Appl. Phys. A 79, 153 (2004).

14. M. McLaughlin, H. F. Sakeek, P. Maguire, W. G. Graham, J. Molloy, T. Morrow, S. Laverty, and J. Anderson, Appl. Phys. Lett. 63, 1865 (1993).

15. C. Wang, Q. Li, L. Lu, L. Zhang, H. Qi, and H. Chen, Chin. Phys. Lett. 24, 825 (2007).

16. T. B. Nasrallah, M. Amlouk, J. C. Bernede, and S. Belgacem, Phys. Stat. Sol. (a) 201, 3070 (2004).

17. N. K. Morozova, I. A. Karetnikov, V. G. Plotnichenko, E. M. Gavrishchuk, E. V. Yashina, and V. B. Ikonnikov, Semiconductors 38, 36 (2004).

18. S. M. Prokes, J. A. Freitas, and P. C. Searson. Appl. Phys. Lett. 60, 3295 (1992).

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