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Chin. Opt. Lett.
 Home  List of Issues    Issue 11 , Vol. 02 , 2004    High power AlGaInP laser diodes with zinc-diffused window mirror structure


High power AlGaInP laser diodes with zinc-diffused window mirror structure
Yun Xu1, Qing Cao1;2, Xiaopeng Zhu1, Guohua Yang1, Qiaoqiang Gan1, Guofeng Song1, Liang Guo1;2, Yuzhang Li1;2, Lianghui Chen1
1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832E-O National Co. Ltd., Huizhou 516023

Chin. Opt. Lett., 2004, 02(11): pp.647-647-

DOI:
Topic:Lasers and laser optics
Keywords(OCIS Code): 140.5960  140.7300  140.3570  

Abstract
The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/AlGaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm.

Copyright: © 2003-2012 . This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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Received:2004/4/19
Accepted:
Posted online:

Get Citation: Yun Xu, Qing Cao, Xiaopeng Zhu, Guohua Yang, Qiaoqiang Gan, Guofeng Song, Liang Guo, Yuzhang Li, Lianghui Chen, "High power AlGaInP laser diodes with zinc-diffused window mirror structure," Chin. Opt. Lett. 02(11), 647-647-(2004)

Note: This work was supported by the National "863" Hi-Tech Program of China under Grant No. 2002AA313050. The authors would like to thank Hi-Tech Optoelectronics Company and EON National Company. Y. Xu's e-mail address is xuyun@red.semi.ac.cn.



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