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Chin. Opt. Lett.
 Home  List of Issues    Issue 11 , Vol. 01 , 2003    Visible electroluminescence from p-n junction porous Si diode with a polyaniline film contact

Visible electroluminescence from p-n junction porous Si diode with a polyaniline film contact
Hongjian Li1;2;3, Baiyun Huan)1, Danqing Yi2, Haoyang Cui3, Jingcui Peng3
1State Key Laboratory for Powder Metallurgy
2College of Materials Science and Engineering, Central South University, Changsha 4100833Department of Applied Physics, Hunan University, Changsha 410082

Chin. Opt. Lett., 2003, 01(11): pp.677-677-

Topic:Optical devices
Keywords(OCIS Code): 230.3670  250.5230  

We have fabricated a light emitting diode using a p-type conducting polyaniline layer deposited on a n-type porous silicon (PS) layer. The contact formed between a p-type conducting polyaniline layer and a n-type PS wafer has rectified behaviour demonstrated clearly by the I-V curves. The series resistance Rs in the p-type conducting polyaniline/n-PS diode is reduced greatly and has a lower onset voltage compared with ITO/n-PS diode. The PS has an orange photoluminescence (PL) band after coating with polyaniline. Visible electroluminescence (EL) has been obtained from this junction when a forward bias is applied. The emission band is very broad extending from 600 - 803 nm with a peak at 690 nm.

Copyright: © 2003-2012 . This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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Get Citation: Hongjian Li, Baiyun Huan), Danqing Yi, Haoyang Cui, Jingcui Peng, "Visible electroluminescence from p-n junction porous Si diode with a polyaniline film contact," Chin. Opt. Lett. 01(11), 677-677-(2003)

Note: H. Li’s e-mail address is lihj398@sohu.com.


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